Download Wideband Low Noise Amplifiers Exploiting Thermal Noise by Federico Bruccoleri PDF

By Federico Bruccoleri

Low Noise Amplifiers (LNAs) are established to magnify signs which are too vulnerable for direct processing for instance in radio or cable receivers. regularly, low noise amplifiers are carried out through tuned amplifiers, exploiting inductors and capacitors in resonating LC-circuits. this may render very low noise yet purely in a comparatively slender frequency band just about resonance. there's a transparent development to take advantage of extra bandwidth for verbal exchange, either through cables (e.g. cable television, net) and instant hyperlinks (e.g. satellite tv for pc hyperlinks and extremely Wideband Band). for that reason wideband low-noise amplifier ideas are a great deal needed.

Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation explores ideas to achieve wideband amplifiers, able to impedance matching and nonetheless reaching a low noise determine good less than 3dB. this is completed with a brand new noise cancelling method as defined during this e-book. by utilizing this system, the thermal noise of the enter transistor of the LNA may be cancelled whereas the sought after sign is amplified! The publication supplies a close research of this system and offers a number of new amplifier circuits.

This ebook is at once appropriate for IC designers and researchers engaged on built-in transceivers. even if the focal point is on CMOS circuits, the ideas can simply in addition be utilized to different IC applied sciences, e.g. bipolar and GaAs, or even in discrete part technologies.

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Extra info for Wideband Low Noise Amplifiers Exploiting Thermal Noise Cancellation

Example text

For A1 and A4, the output noise power due to the output device is equal to the noise power of an equivalent resistor NEF/ga. e. AVF=1-1/(gaRS) for A4 and AVF=-1/(gaRS) for A1). Therefore, the noise power generated by the output device is larger for A4, so F is larger too. An analogous conclusion holds when the output noise power due to the matching device is considered. In this case, half of the noise current of the input device flows into a resistor equal to RS+1/ga for A4 and equal to 1/ga for A1.

To this purpose, a MOST is modelled as a linear VCCS, I=g·V, with “g=gm”. By doing so, the MOSFET output conductance gd, body transconductance gmb, terminal capacitances Cxy as well as the load will be neglected. This is acceptable to estimate the in-band performance of these amplifiers, as: x By construction, their node impedance is determined by gm with gm>max{gmb, gd}. x By design, a relatively large gm will be required to operate at high frequencies and for low-noise as well, thus relation gm> Ȧ·max{Cxy, CL} holds.

For equal gm, the differential pair uses 2 or 4 times more power. x They use a minimum of biasing sources. This leads to less parasitic capacitance and noise from the biasing circuitry is coupled into the signal path. In this chapter, important aspects of the performance of these 2-MOSFET amplifiers are analysed. The aim is to find out whether the new amplifiers A1 and A3 perform superiorly with respect to amplifiers A2 and A4. It will turn out that amplifier A3 has favourable properties with respect to its noise factor.

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