Download Radio Frequency Transistors. Principles and practical by Norman Dye, Helge Granberg PDF

By Norman Dye, Helge Granberg

Radio Frequency Transistors: rules and functional Applications is a whole instrument equipment for profitable RF circuit layout. As mobile and satellite tv for pc communications fields proceed to extend, the necessity for RF circuit layout grows. Radio Frequency Transistors encompasses a wealth of sensible layout info in accordance with years of expertise from authors who've labored with the prime brands of RF parts. The publication focuses totally on the tougher zone of excessive energy transistor amplifier layout and construction.

An whole bankruptcy dedicated exclusively to LDMOS excessive strength RF transistors has been further to the hot version. A comparability is given among LDMOS FETs, TMOS FETs and bipolar transistors, exhibiting in actual fact why LDMOS is the designer's selection for prime strength, linear amplifiers in ultra-modern quickly increasing electronic international of communications. insurance additionally contains functions of LDMOS RF excessive strength transistors in present iteration mobile applied sciences, the layout of LDMOS excessive strength amplifiers, and reviews concerning the most up-to-date efforts to version LDMOS RF energy devices.

Other subject matters lined comprise the choice of matched excessive strength RF transistors, enter impedance matching of excessive strength transistors, interstage matching, and capacitors and inductors at radio frequencies.

  • Fully up to date to incorporate the latest leading edge expertise of RF circuit design
  • Contains useful, hands-on layout suggestion that will help you retailer time, cash and resources
  • Written by means of engineers for engineers to take advantage of within the field

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Extra info for Radio Frequency Transistors. Principles and practical applications

Example text

Not specified or measurable with MOSFETs unless done carefully at low current levels. Gate rupture can be compared to exceeding a capacitor's maximum voltage rating. Not specified or necessary in most cases for BJTs. For a MOSFET, this parameter determines the turn-on gate voltage, and must be known for biasing the device. Collector-emitter or drain-source leakage current with base and emitter or gate and source shorted. C. power, increased dissipation and long term reliability. Base-emitter reverse leakage current and gate-source leakage current.

As the power transistor gets larger and larger (higher and higher power) and is designed to operate at higher and higher frequencies, the result is a continual decrease in the input and output impedances of the device. Think of it this way: higher power transistors are simply increased numbers of low power transistors connected in parallel. Resistors in parallel result in a lower overall resistance; capacitors in parallel result in a higher overall capacitance. The net result is an input impedance for high power, high frequency transistors that is too low to be practical for circuit designers who have access only to the terminals of the transistor.

RF transistor packages will be discussed in more detail in Chapter 6. High Power High power (greater than 1 watt) RF transistors are offered in a wider variety of choices and, thus, present additional problems in device selection. The major distinctions are in voltage of operation, frequency of operation and output power. Other factors also enter into the selection process. Some of these are the linearity and bandwidth required (assuming the application is an amplifier), the efficiency, the ruggedness (which is the ability of the transistor to withstand unfavorable load environments—also see Chapter 1), the thermal requirements for reliability and, of course, the type of package.

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