By Wai-Kai Chen
The foundations and alertness in Engineering sequence is a brand new sequence of handy, good value references sharply eager about specific engineering subject matters and subspecialties. each one quantity during this sequence includes chapters rigorously chosen from CRC's bestselling handbooks, logically equipped for max comfort, and thoughtfully priced to slot each funds. Extracted from the best-selling VLSI guide, Analog Circuits and units presents a accomplished source protecting the spectrum of units and their types. as well as functional discussions on amplifiers, circuits and filters, and compound semiconductor electronic built-in circuit expertise, it is also chapters on layout automation, layout languages, and algorithms and architectures
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Extra info for Analog Circuits and Devices
1 The Threshold Voltage • The Body Effect • The Drain Current • Short-Channel MOSFETs • MOSFET Output Resistance • MOSFET Transconductance • MOSFET OpenCircuit Voltage Gain • Layout of the MOSFET Harry W. 2 Donald C. 3-7 The Current Mirror • Simple Current Mirror Biasing Circuits • The Self-Biased Beta Multiplier Current Reference R. ). To make this discussion meaningful and clear, we need to define some important variables related to the DC operation of MOSFETs (Fig. 1). 1(a) shows the simplified schematic representations of n- and p-channel MOSFETs.
Hence, the highest performance will always be obtained with passive inductors and capacitors. Unfortunately, standard integrated circuit technology has not evolved with a focus on providing good passive elements. This chapter describes the limited palette of options available, as well as means to make the most use out of what is available. 2 Fractal Capacitors Of capacitors, the most commonly used are parallel-plate and MOS structures. Because of the thin gate oxides now in use, capacitors made out of MOSFETs have the highest capacitance density of any standard IC option, with a typical value of approximately 7 fF/mm2 for a gate oxide thickness of 5 nm.
1 Analog Circuits and Devices MOSFET device characteristics. drain current against the gate-source voltage. The slope of the curve in the subthreshold region (sometimes also called the weak inversion region) is used to specify how the drain current changes with VGS. A typical value for the reciprocal of the slope of this curve is 100 mV/dec. 609 ¥ 10–23 C), and N is the slope parameter. Note that the slope of the Log ID vs. 2) The Body Effect The threshold voltage of a MOSFET is dependent on the potential between the source of the MOSFET and its body.