Download Advances in CMP Polishing Technologies by Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa PDF

By Toshiro Doi, Ioan D. Marinescu, Syuhei Kurokawa

CMP and sharpening are the main unique methods used to complete the surfaces of mechanical and digital or semiconductor elements. Advances in CMP/Polishing applied sciences for Manufacture of digital units provides the newest advancements and technological thoughts within the box – making state of the art R&D obtainable to the broader engineering group.

Most of the functions of those approaches are stored as private as attainable (proprietary information), and particular info usually are not visible in specialist or technical journals and magazines. This ebook makes those methods and purposes obtainable to a much wider business and educational audience.

Building at the basics of tribology – the technology of friction, put on and lubrication – the authors discover the sensible functions of CMP and sprucing throughout a number of industry sectors. as a result excessive velocity of improvement of the electronics and semiconductors undefined, a number of the offered strategies and functions come from those industries.

  • Demystifies medical advancements and technological ideas, establishing them up for brand new purposes and approach advancements within the semiconductor and different parts of precision engineering
  • Explores inventory elimination mechanisms in CMP and sprucing, and the demanding situations occupied with predicting the results of abrasive methods in high-precision environments
  • The authors compile the newest strategies and learn from the united states and Japan

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Additional resources for Advances in CMP Polishing Technologies

Sample text

The material removal rate per unit lapping distance is the same, and is independent of the work piece velocity when lapping. 3. The material removal rate is assumed equal without reference to lapping condition. 4. The effect of pressure on the material removal rate is independent of work piece size. The Current Situation in Ultra-Precision Technology À Silicon Single Crystals as an Example 43 However when dilute compound is used, abrasion by the pointed edges of the abrasive would be rapid and the MRR would differ for small and large work pieces.

Material removal rate is low and is limited to those areas of the surface which interfere with the required surface texture. Operates with abrasives whose grit sizes are fine enough to avoid penetration into the work piece surface to a depth detrimental to any of the required surface characteristics. It is a low speed operation. High speeds can spoil the surface texture as a lot of heat is generated. Speeds in the order of one-fifth, or often less, of grinding speeds are used. Lapping applies a specific pressure resulting in an infeed rate which adjusts itself to the conditions of the work piece surface.

This theory is supported by experiments conducted by Dr. Matsunaga. The other theory states that the stock removal rate increases significantly with an increase in abrasive grain size. Dr. Sato showed that the stock removal rate decreased greatly with decreasing grain size. Dr. Matsunaga obtained some interesting results when he conducted the lapping process by feeding the compound continuously. The abrasive used was white alumina, the vehicle used was grease, the abrasive to grease ratio used was 1:1 and a pressure of 2 kg/cm2 was applied.

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